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Magnetic In(x)Ga(1 - x)N nanowires at room temperature using Cu dopant and annealing
Single-crystal, Cu-doped In(x)Ga(1 - x)N nanowires were grown on GaN/Al(2)O(3) substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In(x)Ga(1 - x)N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanow...
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| Izdano u: | Nanoscale Res Lett |
|---|---|
| Glavni autori: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer US
2015
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4493842/ https://ncbi.nlm.nih.gov/pubmed/26055472 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-10-3 |
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