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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al(0.5)Ga(0.5)As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4489975/ https://ncbi.nlm.nih.gov/pubmed/26123271 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0973-5 |
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