Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4–3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-sc...

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Vydáno v:Sci Rep
Hlavní autoři: Wook Shin, Hyun, Jun Lee, Sang, Gun Kim, Doo, Bae, Myung-Ho, Heo, Jaeyeong, Jin Choi, Kyoung, Jun Choi, Won, Choe, Jeong-woo, Cheol Shin, Jae
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group 2015
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4451803/
https://ncbi.nlm.nih.gov/pubmed/26035286
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10764
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