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High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concent...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2013
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3735493/ https://ncbi.nlm.nih.gov/pubmed/23866944 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-327 |
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