लोड हो रहा है...

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanis...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Sci Rep
मुख्य लेखकों: Li, Jiakai, Dehzangi, Arash, Brown, Gail, Razeghi, Manijeh
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Nature Publishing Group UK 2021
विषय:
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC8007830/
https://ncbi.nlm.nih.gov/pubmed/33782500
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-86566-8
टैग : टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!