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Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
Surface potential measurement on atomically thin MoS(2) flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS(2) thin flakes. Schottky diode devices using mono- and multi- layer MoS(2) channels were demonstrated by employing Ti and P...
में बचाया:
| में प्रकाशित: | Sci Rep |
|---|---|
| मुख्य लेखकों: | , , , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group
2015
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4438430/ https://ncbi.nlm.nih.gov/pubmed/25990304 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10440 |
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