Investigation of LRS dependence on the retention of HRS in CBRAM

The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS) switching from different low resistance state (LRS) were investigated in a 1-kb array wit...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Luo, Qing, Gong, Tiancheng, Wang, Ming, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2015
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4385049/
https://ncbi.nlm.nih.gov/pubmed/25852358
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0771-0
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