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Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition
Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385034/ https://ncbi.nlm.nih.gov/pubmed/25852371 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0801-y |
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