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Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

[Image: see text] In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major lim...

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Xehetasun bibliografikoak
Argitaratua izan da:ACS Photonics
Egile Nagusiak: Puchtler, Tim J., Woolf, Alexander, Zhu, Tongtong, Gachet, David, Hu, Evelyn L., Oliver, Rachel A.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: American Chemical Society 2014
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4372119/
https://ncbi.nlm.nih.gov/pubmed/25839048
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/ph500426g
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