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Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities
Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light−matter interactions and realize...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Academy of Sciences
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4191791/ https://ncbi.nlm.nih.gov/pubmed/25197073 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1415464111 |
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