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Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors
We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology...
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| Vydáno v: | Sensors (Basel) |
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| Hlavní autoři: | , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4367409/ https://ncbi.nlm.nih.gov/pubmed/25686312 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s150204253 |
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