Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO(2) and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO(2), (ii) implantation prean...

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Bibliografiske detaljer
Udgivet i:Beilstein J Nanotechnol
Main Authors: Toinin, Jacques Perrin, Portavoce, Alain, Hoummada, Khalid, Texier, Michaël, Bertoglio, Maxime, Bernardini, Sandrine, Abbarchi, Marco, Chow, Lee
Format: Artigo
Sprog:Inglês
Udgivet: Beilstein-Institut 2015
Fag:
Full Research Paper
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4362477/
https://ncbi.nlm.nih.gov/pubmed/25821672
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.6.32
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