Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operat...

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Enregistré dans:
Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Zhao, S., Connie, A. T., Dastjerdi, M. H. T., Kong, X. H., Wang, Q., Djavid, M., Sadaf, S., Liu, X. D., Shih, I., Guo, H., Mi, Z.
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2015
Sujets:
Article
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC4329565/
https://ncbi.nlm.nih.gov/pubmed/25684335
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep08332
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