Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Chang, Hongliang, Chen, Zhaolong, Liu, Bingyao, Yang, Shenyuan, Liang, Dongdong, Dou, Zhipeng, Zhang, Yonghui, Yan, Jianchang, Liu, Zhiqiang, Zhang, Zihui, Wang, Junxi, Li, Jinmin, Liu, Zhongfan, Gao, Peng, Wei, Tongbo
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2020
Assuntos:
Communications
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7404167/
https://ncbi.nlm.nih.gov/pubmed/32775172
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202001272
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