Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operat...

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Bibliographic Details
Published in:Sci Rep
Main Authors: Zhao, S., Connie, A. T., Dastjerdi, M. H. T., Kong, X. H., Wang, Q., Djavid, M., Sadaf, S., Liu, X. D., Shih, I., Guo, H., Mi, Z.
Format: Artigo
Language:Inglês
Published: Nature Publishing Group 2015
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Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC4329565/
https://ncbi.nlm.nih.gov/pubmed/25684335
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep08332
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