Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Tran...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Yayımlandı:Nanoscale Res Lett
Asıl Yazarlar: Cao, Yunqing, Lu, Peng, Zhang, Xiaowei, Xu, Jun, Xu, Ling, Chen, Kunji
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer 2014
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4256967/
https://ncbi.nlm.nih.gov/pubmed/25489285
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-634
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!

Benzer Materyaller