Carregant...
Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers
Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Tran...
Guardat en:
| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2014
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4256967/ https://ncbi.nlm.nih.gov/pubmed/25489285 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-634 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|