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Electronic properties of core-shell nanowire resonant tunneling diodes
The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optima...
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2014
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| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4185094/ https://ncbi.nlm.nih.gov/pubmed/25288912 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-509 |
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