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Low Al-composition p-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
Low Al-composition p-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was...
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| Autors principals: | , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4159626/ https://ncbi.nlm.nih.gov/pubmed/25205042 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06322 |
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