Zhang, K., Liang, H., Liu, Y., Shen, R., Guo, W., Wang, D., . . . Du, G. (2014). Low Al-composition p-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate. Nature Publishing Group.
Citação norma ChicagoZhang, Kexiong, et al. Low Al-composition P-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN Polarization-induced Backward Tunneling Junction Grown By Metal-organic Chemical Vapor Deposition On Sapphire Substrate. Nature Publishing Group, 2014.
Citação norma MLAZhang, Kexiong, et al. Low Al-composition P-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN Polarization-induced Backward Tunneling Junction Grown By Metal-organic Chemical Vapor Deposition On Sapphire Substrate. Nature Publishing Group, 2014.