Wordt geladen...
Optically decomposed near-band-edge structure and excitonic transitions in Ga(2)S(3)
The band-edge structure and band gap are key parameters for a functional chalcogenide semiconductor to its applications in optoelectronics, nanoelectronics, and photonics devices. Here, we firstly demonstrate the complete study of experimental band-edge structure and excitonic transitions of monocli...
Bewaard in:
| Hoofdauteurs: | , |
|---|---|
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Nature Publishing Group
2014
|
| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4139941/ https://ncbi.nlm.nih.gov/pubmed/25142550 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06143 |
| Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|