載入...
Optically decomposed near-band-edge structure and excitonic transitions in Ga(2)S(3)
The band-edge structure and band gap are key parameters for a functional chalcogenide semiconductor to its applications in optoelectronics, nanoelectronics, and photonics devices. Here, we firstly demonstrate the complete study of experimental band-edge structure and excitonic transitions of monocli...
Na minha lista:
| Main Authors: | , |
|---|---|
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Nature Publishing Group
2014
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4139941/ https://ncbi.nlm.nih.gov/pubmed/25142550 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06143 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|