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Optically decomposed near-band-edge structure and excitonic transitions in Ga(2)S(3)
The band-edge structure and band gap are key parameters for a functional chalcogenide semiconductor to its applications in optoelectronics, nanoelectronics, and photonics devices. Here, we firstly demonstrate the complete study of experimental band-edge structure and excitonic transitions of monocli...
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| Главные авторы: | , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group
2014
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4139941/ https://ncbi.nlm.nih.gov/pubmed/25142550 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06143 |
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