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Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintention...
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| Main Authors: | , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Pub. Group
2014
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4059928/ https://ncbi.nlm.nih.gov/pubmed/24886761 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms4990 |
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