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Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resi...
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| Izdano u: | Nanoscale Res Lett |
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| Glavni autori: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer US
2018
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5899076/ https://ncbi.nlm.nih.gov/pubmed/29654517 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2513-6 |
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