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Tailoring resistive switching in Pt/SrTiO(3) junctions by stoichiometry control
Resistive switching effects in transition metal oxide-based devices offer new opportunities for information storage and computing technologies. Although it is known that resistive switching is a defect-driven phenomenon, the precise mechanisms are still poorly understood owing to the difficulty of s...
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| Published in: | Sci Rep |
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| Main Authors: | , , , , |
| Format: | Artigo |
| Language: | Inglês |
| Published: |
Nature Publishing Group
2015
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| Subjects: | |
| Online Access: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4460896/ https://ncbi.nlm.nih.gov/pubmed/26056783 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11079 |
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