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Electron transport of WS(2) transistors in a hexagonal boron nitride dielectric environment
We present the first study of the intrinsic electrical properties of WS(2) transistors fabricated with two different dielectric environments WS(2) on SiO(2) and WS(2) on h-BN/SiO(2), respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natura...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2014
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4021321/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04967 |
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