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Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

Silicon dioxide (SiO(2)) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at te...

詳細記述

保存先:
書誌詳細
主要な著者: Ashok, Akarapu, Pal, Prem
フォーマット: Artigo
言語:Inglês
出版事項: Hindawi Publishing Corporation 2014
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC3929520/
https://ncbi.nlm.nih.gov/pubmed/24672287
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1155/2014/106029
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