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Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors
The effects of uniaxial tensile strain on the ultimate performance of a dual-gated graphene nanoribbon field-effect transistor (GNR-FET) are studied using a fully analytical model based on effective mass approximation and semiclassical ballistic transport. The model incorporates the effects of edge...
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| Formato: | Artigo |
| Idioma: | Inglês |
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Springer
2014
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| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3923746/ https://ncbi.nlm.nih.gov/pubmed/24506842 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-65 |
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