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Gate Length Variation Effect on Performance of Gate-First Self-Aligned In(0.53)Ga(0.47)As MOSFET
A multi-gate n-type In(0.53)Ga(0.47)As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al(2)O(3) oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device par...
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| Main Authors: | , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Public Library of Science
2013
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3867396/ https://ncbi.nlm.nih.gov/pubmed/24367548 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1371/journal.pone.0082731 |
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