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Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
The dependence of interface roughness of pseudomorphic AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [T...
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| Hoofdauteurs: | , , , |
|---|---|
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Springer
2011
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3238496/ https://ncbi.nlm.nih.gov/pubmed/22112249 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-603 |
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