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Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching

Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicit...

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Hlavní autoři: Asoh, Hidetaka, Fujihara, Kousuke, Ono, Sachiko
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2013
Témata:
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3852592/
https://ncbi.nlm.nih.gov/pubmed/24090268
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-410
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