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Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicit...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3852592/ https://ncbi.nlm.nih.gov/pubmed/24090268 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-410 |
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