Učitavanje...
Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials
Improved switching characteristics were obtained from high-κ oxides AlO(x), GdO(x), HfO(x), and TaO(x) in IrO(x)/high-κ(x)/W structures because of a layer that formed at the IrO(x)/high-κ(x) interface under external positive bias. The surface roughness and morphology of the bottom electrode in these...
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| Glavni autori: | , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer
2013
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3848679/ https://ncbi.nlm.nih.gov/pubmed/24011235 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-379 |
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