Učitavanje...
Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates
A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatm...
Spremljeno u:
| Glavni autori: | , , , , |
|---|---|
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
International Union of Crystallography
2013
|
| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3769058/ https://ncbi.nlm.nih.gov/pubmed/24046492 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S0021889813010169 |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|