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Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate
Alloying at the metal–semiconductor interface induced by femtosecond laser irradiation associated with thermal annealing was examined to ascertain whether an ohmic contact was formed on silicon carbide (SiC). In general, the electric field of the femtosecond laser beam destroys the crystal structure...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2018-06-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/1.5036804 |
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