Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer

A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb(3)Te layer which causes the reduction in the reset voltage compared to a conventional phase ch...

Cijeli opis

Spremljeno u:
Bibliografski detalji
Glavni autori: Song, Sannian, Song, Zhitang, Peng, Cheng, Gao, Lina, Gu, Yifeng, Zhang, Zhonghua, Lv, Yegang, Yao, Dongning, Wu, Liangcai, Liu, Bo
Format: Artigo
Jezik:Inglês
Izdano: Springer 2013
Teme:
Nano Express
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3673895/
https://ncbi.nlm.nih.gov/pubmed/23414571
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-77
Oznake: Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!

Similar Items