Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer

A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb(3)Te layer which causes the reduction in the reset voltage compared to a conventional phase ch...

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Detalhes bibliográficos
Main Authors: Song, Sannian, Song, Zhitang, Peng, Cheng, Gao, Lina, Gu, Yifeng, Zhang, Zhonghua, Lv, Yegang, Yao, Dongning, Wu, Liangcai, Liu, Bo
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2013
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3673895/
https://ncbi.nlm.nih.gov/pubmed/23414571
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-77
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