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Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications

Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...

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Main Authors: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
格式: Artigo
語言:Inglês
出版: Springer 2013
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在線閱讀:https://ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://ncbi.nlm.nih.gov/pubmed/23413837
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-80
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