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Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications

Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...

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書誌詳細
主要な著者: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
フォーマット: Artigo
言語:Inglês
出版事項: Springer 2013
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://ncbi.nlm.nih.gov/pubmed/23413837
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-80
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