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Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications

Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...

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Detaylı Bibliyografya
Asıl Yazarlar: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer 2013
Konular:
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://ncbi.nlm.nih.gov/pubmed/23413837
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-80
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