Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications

Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...

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Bibliografske podrobnosti
Main Authors: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
Format: Artigo
Jezik:Inglês
Izdano: Springer 2013
Teme:
Nano Express
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://ncbi.nlm.nih.gov/pubmed/23413837
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-80
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