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Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...
में बचाया:
| मुख्य लेखकों: | , , , , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer
2013
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3666895/ https://ncbi.nlm.nih.gov/pubmed/23413837 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-80 |
| टैग : |
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