Tunable band gap in few-layer graphene by surface adsorption

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance individually. Using first principle calculations, we pr...

Popoln opis

Shranjeno v:
Bibliografske podrobnosti
Main Authors: Quhe, Ruge, Ma, Jianhua, Zeng, Zesheng, Tang, Kechao, Zheng, Jiaxin, Wang, Yangyang, Ni, Zeyuan, Wang, Lu, Gao, Zhengxiang, Shi, Junjie, Lu, Jing
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2013
Teme:
Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC3646358/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01794
Oznake: Označite
Brez oznak, prvi označite!

Podobne knjige/članki