Tunable band gap in few-layer graphene by surface adsorption

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance individually. Using first principle calculations, we pr...

Fuld beskrivelse

Na minha lista:

Bibliografiske detaljer
Main Authors:	Quhe, Ruge, Ma, Jianhua, Zeng, Zesheng, Tang, Kechao, Zheng, Jiaxin, Wang, Yangyang, Ni, Zeyuan, Wang, Lu, Gao, Zhengxiang, Shi, Junjie, Lu, Jing
Format:	Artigo
Sprog:	Inglês
Udgivet:	Nature Publishing Group 2013
Fag:	Article
Online adgang:	https://ncbi.nlm.nih.gov/pmc/articles/PMC3646358/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01794
Tags:	Tilføj Tag Ingen Tags, Vær først til at tagge denne postø!

Tunable band gap in few-layer graphene by surface adsorption

Lignende værker