載入...
Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely...
Na minha lista:
| Main Authors: | , , , |
|---|---|
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Springer
2013
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3576240/ https://ncbi.nlm.nih.gov/pubmed/23388169 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-59 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|