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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the I...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2007
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3246353/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-007-9066-4 |
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