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Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
A sample of the β-Ga(2)O(3)/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga(2)O(3) layer was formed epitaxially on GaN. The valence band offset of the β-Ga(2)O(3)/wurtzite GaN heterostructure is me...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Springer
2012
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3526396/ https://ncbi.nlm.nih.gov/pubmed/23046910 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-562 |
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