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Valence band offset of wurtzite InN/SrTiO(3 )heterojunction measured by x-ray photoelectron spectroscopy
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO(3)) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heteroju...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2011
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211249/ https://ncbi.nlm.nih.gov/pubmed/21711731 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-193 |
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