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Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination...

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Detalhes bibliográficos
Main Authors: Liu, JM, Liu, XL, Xu, XQ, Wang, J, Li, CM, Wei, HY, Yang, SY, Zhu, QS, Fan, YM, Zhang, XW, Wang, ZG
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2010
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2897041/
https://ncbi.nlm.nih.gov/pubmed/20676206
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9650-x
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