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Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination...
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| Главные авторы: | , , , , , , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer
2010
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2897041/ https://ncbi.nlm.nih.gov/pubmed/20676206 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9650-x |
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