Valence band offset of wurtzite InN/SrTiO(3 )heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO(3)) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heteroju...

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Bibliografiske detaljer
Main Authors: Li, Zhiwei, Zhang, Biao, Wang, Jun, Liu, Jianming, Liu, Xianglin, Yang, Shaoyan, Zhu, Qinsheng, Wang, Zhanguo
Format: Artigo
Sprog:Inglês
Udgivet: Springer 2011
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211249/
https://ncbi.nlm.nih.gov/pubmed/21711731
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-193
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