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Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching
A new method of fabricating high aspect ratio nanostructures in silicon without the use of sub-micron lithographic technique is reported. The proposed method comprises two important steps including the use of CMOS spacer technique to form silicon nitride nanostructure masking followed by deep reacti...
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| Auteurs principaux: | , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer
2012
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3502542/ https://ncbi.nlm.nih.gov/pubmed/22672745 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-288 |
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